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This section describes derating requirements for Discrete Semiconductors. Use this section to select, design and derate Discrete Semiconductors.

Tables 1A, 1B and 1C illustrate derating requirements for silicon-based Discrete Semiconductors. Discrete semiconductors are divided into diode and transistor categories. For silicon Discrete Semiconductors, each part type has Derating Parameters, Quality Level, and Environmental Category for derating. Use these derating tables in conjunction with the manufacturer’s specification sheet to properly rate each part.

Non-military parts are not designed to operate over the required 10 to 20 years life span or to meet the extreme environmental conditions of a “severe” environment. This is why non-military consumer parts are not allowed to be used in “severe” environments. Up screening or Up-Rating of Discrete Semiconductor parts is not allowed.

Table 1A. Silicon-Based Discrete Semiconductor Derating Requirements

 

Environmental Category

Part Type

Derating Parameter

Quality Level 1/

Protected

Normal

Severe

Diode
General Purpose (Small Signal – Switching)

Forward Current (IF)

Reverse Voltage (VR)

Surge Current (IFSM)

Max TJ (°C)


IF

VR

IFSM

TJ


IF

VR

IFSM

TJ

1
 
 
 

2
 
 
 

3
 
 
 
100%
95%
100%
150°C

90%
80%
80%
100°C

75%
70%
60%
70°C

100%

90%
90%
125°C

90%

75%
80%
85°C

70%

60%
30%
35°C

100%

85%
80%
125°C

70%

50%
50%
70°C

Power Rectifier

Forward Current (IF)

Reverse Voltage (VR)

Max TJ (°C)


IF

VR

TJ


IF

VR

TJ

1
 
 

2
 
 

3
 
 
100%
95%
150°C

90%
80%
100°C

60%
50%
70°C
100%
90%
125°C

85%
75%
85°C

50%
30%
35°C
90%
85%
125°C

60%
30%
70°C

Schottky -PIN

Power Dissipation (PD)

Reverse Voltage (VR)

Max TJ (°C)


PD

VR

TJ


PD

VR

TJ

1
 
 

2
 
 

3
 
 
100%
95%
150°C

90%
80%
100°C

75%
50%
70°C
100%
90%
125°C

90%
80%
85°C

75%
30%
35°C
90%
85%
125°C

50%
25%
70°C

 

1/ The Quality Levels are: (1) QML-19500, JANTX minimum; (2) Automotive parts certified QS-9000, Industrial-grade parts certified ISO-9000, or QML-19500 manufacturer with part less than JANTX level; and (3) Non-military consumer-grade parts certified ISO-9000.

 

Table 1B. Silicon-Based Discrete Semiconductors Derating Requirements

 

 

Environmental Category

Part Type

Derating Parameter

Quality Level 1/

Protected

Normal

Severe

 

 

 Voltage Regulator/ Reference

 

Power Dissipation (PD)

Max TJ (°C)


PD

TJ


PD

TJ

1
 

2
 

3
 
100%
150°C

90%
100°C

50%
70°C
100%
125°C

80%
85°C

50%
35°C
90%
125°C

50%
70°C

Transient Voltage Suppress

Power Dissipation (PD)

Average Current (IO)

Max TJ (°C)


Power Dissipation (PD)

Average Current (IO)

TJ


Power Dissipation (PD)

Average Current (IO)

TJ

1
 
 

2
 
 

3
 
 
100%
100%
150°C

80%
80%
100°C

75%
75%
70°C
100%
100%
125°C

80%
80%
85°C

50%
50%
35°C
90%
90%
125°C

50%
50%
70°C

Thyristor

On-State Current (It)

Off-State Voltage (VDM)

Max TJ (°C)


It

VDM

TJ


It

VDM

TJ

1
 
 

2
 
 

3
 
 
100%
100%
150°C

90%
90%
100°C

60%
60%
70°C
100%
100%
125°C

80%
80%
85°C

50%
50%
35°C
90%
90%
125°C

50%
50%
70°C

 

 

 

Table 1C. Silicon-Based Discrete Semiconductors Derating Requirements

 

Environmental Category

Part Type

Derating Parameter

Quality Level 1/ 

Protected

Normal

Severe

 

Microwave

 

 

Power Dissipation (PD)

Reverse Voltage (VR)

Max TJ (°C)


PD

VR

TJ


PD

VR

TJ

1
 
 

2
 
 

3
 
 
100%
90%
150°C

90%
80%
100°C

75%
50%
70°C
100%
90%
125°C

80%
75%
85°C

70%
30%
35°C
90%
85%
125°C

60%
30%
70°C

Transistors
Bipolar

 

Power Dissipation (PD)

Breakdown Voltage (VBR)

Safe Operating Area (SOA)

Collector Current (IC)

Max TJ (°C)


PD

VBR

SOA

Collector Current (IC)

TJ


PD

VBR

SOA

Collector Current (IC)

TJ

1
 
 
 
 

2
 
 
 
 

3
 
 
 
 
100%
100%
100% VCE
100% IC
150°C

90%
80%
80% VCE
90% IC
100°C

50%
25%
50% VCE
50% IC
70°C
100%
90%
90% VCE
90% IC
125°C

80%
75%
75% VCE
80% IC
85°C

50%
25%
50% VCE
50% IC
35°C
90%
80%
80% VCE
90% IC
125°C

60%
30%
40% VCE
60% IC
70°C

Transistors
FET

Power Dissipation (PD)

Breakdown Voltage (VBR)

Max TJ (°C)


PD

VBR

TJ


PD

VBR

TJ

1
 
 

2
 
 

3
 
 
100%
100%
150°C

90%
80%
100°C

50%
25%
70°C
100%
95%
125°C

80%
75%
85°C

50%
25%
35°C
90%
90%
125°C

50%
50%
70°C

 

 

Table 2A and 2B detail derating requirements for GaAs Discrete Semiconductors. Since GaAs Discrete Semiconductors are not as mature as their silicon counterparts, they are not derated by quality level or application life span. All derating values are based on manufacturer's rated specifications and recommended derating figures.

Table 2A. GaAs Transistor Derating Requirements

 

 

Environmental Category

Part Type(Transistors)

Derating Parameter

Recommended
Maximum Value

Protected

Normal

Severe

MESFET(Low Noise)

Drain to Source Voltage (Vds)
Gate to Source Voltage (Vgs)
Drain Current (Ids)
Gate Current (Igsf)
Reverse Gate Current (Igsr)
Power Dissipation (Pd)
Channel Temperature (Tch)
Storage Temperature (Tst)
5V
-6V
Idss
0.05 mA
0.01 mA
Mfg. Spec.
175°C
-65 to 175°C
80%
80%

90%

100%
100%
100%
175°C
 
75%
75%

85%

90%
95%
90%.
150°C
 
60%
60%

80%

85%
90%
80%.
125°C
 

PHEMT
(Low Noise)

 

Drain to Source Voltage (Vds)
Gate to Source Voltage (Vgs)
Drain Current (Ids)
Forward Gate Current (Igsf)
Power Dissipation (Pd)
Channel Temperature (Tch)
Storage Temperature (Tst)
2V
-3V
Idss
1.0 mA
Mfg. Spec.
175°C
-65 to 175°C
80%
90%
100%
100%
100%
175°C
 
75%
80%

95%

90%
90%
150°C
 
50%
70%

90%

85%
80%.
125°C
 

MESFET(Power)

 

Drain to Source Voltage (Vds)
Gate to Source Voltage (Vgs)
Drain Current (Ids)
Forward Gate Current (Igsf)
Reverse Gate Current (Igsr)
Power Dissipation (Pd)
Channel Temperature (Tch)
Storage Temperature (Tst)
10V
-5V
Idss
2.0 mA
-0.5 mA
Mfg. Spec.
175°C
-65 to 175°C
100%
100%

100%

100%
100%
100%
175°C
 
90%
90%

90%

90%
85%
90%
150°C
 
85%
85%

85%

85%
80%
80%
125°C
 

HEMT/
PHEMT
(Power)

 

Drain to Source Voltage (Vds)
Gate to Source Voltage (Vgs)
Drain Current (Ids)
Gate Current (Igsf)
Power Dissipation (Pd)
Channel Temperature (Tch)
Storage Temperature (Tst)
9V
-6V
Idss
2.0 mA
Mfg. Spec.
175°C
-65 to 175°C
100%
100%
100%
100%
100%
175°C
 
90%
90%
90%
90%
90%
150°C
 
85%
85%
85%
85%
80%
125°C
 

Note: All parameters are the manufacturers recommended maximum operating values.

Table 2B. GaAs Diode Derating Requirements

 

Environmental Category

Part Type(Diodes)

Derating Parameter

Recommended
Maximum Value

 

Protected

Normal

Severe

Varactor

Reverse Voltage (Vr)
Forward Current (If)
Power Dissipation (Pd)
Operating Temperature (T)
Storage Temperature (Ts)
80% of rated Vbr
80 mA
200 mW
150°C
-65 to 175°C
100%
90%
100%
150°C
 
95%
85%
90%
135°C
 
90%
80%
80%
125°C
 

Schottky

Reverse Voltage (Vr)
Forward Current (If)
Power Dissipation (Pd)
Operating Temperature (T)
Storage Temperature (Ts)
80% of rated Vbr
80% of rated If
Mfg. Spec.
150°C
-65 to 175°C
100%
100%
90%
150°C
 
95%
95%
80%
135°C
 

 

Schottky

Power Dissipation (Pd)
Operating Temperature (T)
Junction Temperature (Tj)
Storage Temperature (Ts)
Mfg. Spec.
150°C
175°C
-65 to 175°C
80%
70°C
150°C