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This section describes derating requirements for
Discrete Semiconductors. Use this section to select, design and derate Discrete
Semiconductors.
Tables 1A, 1B and 1C
illustrate derating requirements for silicon-based Discrete Semiconductors.
Discrete semiconductors are divided into diode and transistor categories. For
silicon Discrete Semiconductors, each part type has Derating Parameters, Quality
Level, and Environmental Category for derating. Use these derating tables in
conjunction with the manufacturer’s specification sheet to properly rate each
part.
Non-military parts are not designed to operate over
the required 10 to 20 years life span or to meet the extreme environmental
conditions of a “severe” environment. This is why non-military consumer parts
are not allowed to be used in “severe” environments. Up screening or Up-Rating
of Discrete Semiconductor parts is not allowed.
Table 1A. Silicon-Based Discrete Semiconductor Derating
Requirements
|
Environmental
Category
|
Part Type
|
Derating Parameter
|
Quality Level 1/
|
Protected
|
Normal
|
Severe
|
Diode
General Purpose (Small Signal – Switching)
|
Forward Current (IF)
|
Reverse Voltage (VR)
|
Surge Current (IFSM)
|
Max TJ (°C)
|
|
|
|
|
|
Power Rectifier
|
Forward Current (IF)
|
Reverse Voltage (VR)
|
Max TJ (°C)
|
|
|
|
|
|
Schottky -PIN
|
Power Dissipation (PD)
|
Reverse Voltage (VR)
|
Max TJ (°C)
|
|
|
|
|
|
1/ The Quality Levels are: (1) QML-19500, JANTX
minimum; (2) Automotive parts certified QS-9000, Industrial-grade parts
certified ISO-9000, or QML-19500 manufacturer with part less than JANTX level;
and (3) Non-military consumer-grade parts certified ISO-9000.
Table 1B.
Silicon-Based Discrete Semiconductors Derating Requirements
|
Environmental
Category
|
Part Type
|
Derating Parameter
|
Quality Level 1/
|
Protected
|
Normal
|
Severe
|
Voltage Regulator/ Reference
|
Power Dissipation (PD)
|
Max TJ (°C)
|
|
|
|
|
|
Transient Voltage
Suppress
|
Power Dissipation (PD)
|
Average Current (IO)
|
Max TJ (°C)
|
Power Dissipation (PD)
|
Average Current (IO)
|
TJ
|
Power Dissipation (PD)
|
Average Current (IO)
|
TJ
|
|
|
|
|
|
Thyristor
|
On-State Current
(It)
|
Off-State Voltage
(VDM)
|
Max TJ (°C)
|
|
|
|
|
|
Table 1C.
Silicon-Based Discrete Semiconductors Derating Requirements
|
Environmental
Category
|
Part
Type
|
Derating
Parameter
|
Quality Level
1/
|
Protected
|
Normal
|
Severe
|
Microwave
|
Power Dissipation (PD)
|
Reverse Voltage
(VR)
|
Max TJ (°C)
|
|
|
|
|
|
Transistors
Bipolar
|
Power Dissipation (PD)
|
Breakdown Voltage
(VBR)
|
Safe Operating Area
(SOA)
|
Collector Current
(IC)
|
Max TJ
(°C)
|
PD
|
VBR
|
SOA
|
Collector Current
(IC)
|
TJ
|
PD
|
VBR
|
SOA
|
Collector Current
(IC)
|
TJ
|
|
|
100% |
100% |
100%
VCE |
100%
IC |
150°C |
90% |
80% |
80%
VCE |
90%
IC |
100°C |
50% |
25% |
50%
VCE |
50%
IC |
70°C |
|
100% |
90% |
90%
VCE |
90%
IC |
125°C |
80% |
75% |
75%
VCE |
80%
IC |
85°C |
50% |
25% |
50%
VCE |
50%
IC |
35°C |
|
90% |
80% |
80%
VCE |
90%
IC |
125°C |
60% |
30% |
40%
VCE |
60%
IC |
70°C |
|
Transistors
FET
|
Power Dissipation (PD)
|
Breakdown Voltage
(VBR)
|
Max TJ (°C)
|
|
|
|
|
|
Table 2A and 2B detail
derating requirements for GaAs Discrete Semiconductors. Since GaAs Discrete
Semiconductors are not as mature as their silicon counterparts, they are not
derated by quality level or application life span. All derating values are based
on manufacturer's rated specifications and recommended derating
figures.
Table 2A. GaAs
Transistor Derating Requirements
|
Environmental
Category
|
Part
Type(Transistors)
|
Derating
Parameter
|
Recommended
Maximum
Value
|
Protected
|
Normal
|
Severe
|
|
Drain to Source Voltage
(Vds) |
Gate to Source Voltage
(Vgs) |
Drain Current
(Ids) |
Gate Current
(Igsf) |
Reverse Gate Current
(Igsr) |
Power Dissipation
(Pd) |
Channel Temperature
(Tch) |
Storage Temperature (Tst)
|
|
5V |
-6V |
Idss |
0.05 mA |
0.01 mA |
Mfg. Spec. |
175°C |
-65 to 175°C
|
|
80% |
80% |
90%
|
100% |
100% |
100% |
175°C |
|
|
75% |
75% |
85%
|
90% |
95% |
90%. |
150°C |
|
|
60% |
60% |
80%
|
85% |
90% |
80%. |
125°C |
|
|
|
Drain to Source Voltage
(Vds) |
Gate to Source Voltage
(Vgs) |
Drain Current
(Ids) |
Forward Gate Current
(Igsf) |
Power Dissipation
(Pd) |
Channel Temperature
(Tch) |
Storage Temperature (Tst)
|
|
2V |
-3V |
Idss |
1.0 mA |
Mfg. Spec. |
175°C |
-65 to 175°C
|
|
80% |
90% |
100% |
100% |
100% |
175°C |
|
|
75% |
80% |
95%
|
90% |
90% |
150°C |
|
|
50% |
70% |
90%
|
85% |
80%. |
125°C |
|
|
|
Drain to Source Voltage
(Vds) |
Gate to Source Voltage
(Vgs) |
Drain Current
(Ids) |
Forward Gate Current
(Igsf) |
Reverse Gate Current
(Igsr) |
Power Dissipation
(Pd) |
Channel Temperature
(Tch) |
Storage Temperature (Tst)
|
|
10V |
-5V |
Idss |
2.0 mA |
-0.5 mA |
Mfg. Spec. |
175°C |
-65 to 175°C
|
|
100% |
100% |
100%
|
100% |
100% |
100% |
175°C |
|
|
90% |
90% |
90%
|
90% |
85% |
90% |
150°C |
|
|
85% |
85% |
85%
|
85% |
80% |
80% |
125°C |
|
|
|
Drain to Source Voltage
(Vds) |
Gate to Source Voltage
(Vgs) |
Drain Current
(Ids) |
Gate Current
(Igsf) |
Power Dissipation
(Pd) |
Channel Temperature
(Tch) |
Storage Temperature (Tst)
|
|
9V |
-6V |
Idss |
2.0 mA |
Mfg. Spec. |
175°C |
-65 to 175°C
|
|
100% |
100% |
100% |
100% |
100% |
175°C |
|
|
90% |
90% |
90% |
90% |
90% |
150°C |
|
|
85% |
85% |
85% |
85% |
80% |
125°C |
|
|
Note: All parameters are the
manufacturers recommended maximum operating values.
Table 2B. GaAs Diode
Derating Requirements
|
Environmental
Category
|
Part
Type(Diodes)
|
Derating
Parameter
|
Recommended
Maximum
Value
|
Protected
|
Normal
|
Severe
|
Varactor
|
Reverse Voltage
(Vr) |
Forward Current
(If) |
Power Dissipation
(Pd) |
Operating Temperature (T) |
Storage Temperature
(Ts) |
|
80% of rated
Vbr |
80 mA |
200 mW |
150°C |
-65 to
175°C |
|
|
|
|
Schottky
|
Reverse Voltage
(Vr) |
Forward Current
(If) |
Power Dissipation
(Pd) |
Operating Temperature (T) |
Storage Temperature
(Ts) |
|
80% of rated
Vbr |
80% of rated
If |
Mfg. Spec. |
150°C |
-65 to
175°C |
|
|
|
|
Schottky
|
Power Dissipation
(Pd) |
Operating Temperature (T) |
Junction Temperature
(Tj) |
Storage Temperature
(Ts) |
|
Mfg. Spec. |
150°C |
175°C |
-65 to
175°C |
|
|
|
|